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Package Marking and Ordering Information
Device Marking
FDB2532
Device
FDB2532_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
150
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 120V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
2
-
4
V
I D = 33A, V GS = 10V
-
0.014
0.016
r DS(ON)
Drain to Source On Resistance
I D = 16A, V GS = 6V,
I D = 33A, V GS = 10V,
T C = 175 o C
-
-
0.016
0.040
0.024
0.048
Ω
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
-
5870
615
135
82
-
-
-
107
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 75V
I D = 33A
I g = 1.0mA
-
-
-
-
11
23
13
19
14
-
-
-
nC
nC
nC
nC
Resistive Switching Characteristics (V GS = 10V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
16
69
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 75V, I D = 33A
V GS = 10V, R GS = 3.6 Ω
-
-
-
-
30
39
17
-
-
-
-
84
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SD = 33A
I SD = 16A
I SD = 33A, dI SD /dt= 100A/ μ s
I SD = 33A, dI SD /dt= 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
105
327
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 0.5 mH, I AS = 40A.
2: Pulse Width = 100s
?2010 Fairchild Semiconductor Corporation
FDB2532_F085 Rev. A
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